The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Dec. 28, 2017
Shin-etsu Quartz Products Co., Ltd., Tokyo, JP;
Heraeus Quarzglas Gmbh & Co. KG, Hanau, DE;
Kotaro Sumi, Sasebo, JP;
Hikari Kuwahara, Sasebo, JP;
Heraeus Deutschland GmbH & Co. KG, Hanau, DE;
Shin-Etsu Quartz Products Co., Ltd., Tokyo, JP;
Abstract
One aspect is a method for producing a hollow porous quartz glass base material. Even when the hollow porous quartz glass base material is produced in large weight and high bulk density, the ease of target extraction is maintained and target extraction is performed stably. The method includes preparing a heat resistant substrate, which has an outer surface on which SiOparticles are deposited, the outer surface having a surface roughness in which the maximum height Rz is less than 9 μm and the arithmetic average roughness Ra is less than 1 μm. The heat resistant substrate is rotated and SiOparticles are deposited on the outer surface of the heat resistant substrate to form a glass particulate deposit. The heat resistant substrate is extracted from the glass particulate deposit to produce the base material.