The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Sep. 30, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yukio Hayakawa, Seongnam-si, KR;
Jooheon Kang, Suwon-si, KR;
Myunghun Woo, Hwaseong-si, KR;
Gunwook Yoon, Suwon-si, KR;
Doohee Hwang, Uiwang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical variable resistance memory device includes gate electrodes and a pillar structure. The gate electrodes are spaced apart from one another on a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate. The pillar structure extends in the vertical direction through the gate electrodes on the substrate. The pillar structure includes a vertical gate electrode extending in the vertical direction, a variable resistance pattern disposed on a sidewall of the vertical gate electrode, and a channel disposed on an outer sidewall of the variable resistance pattern. The channel and the vertical gate electrode contact each other.