The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Jun. 19, 2018
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Aledia, Echirolles, FR;

Inventors:

Christophe Bouvier, Grenoble, FR;

Emilie Pougeoise, Grenoble, FR;

Xavier Hugon, Teche, FR;

Carlo Cagli, Grenoble, FR;

Tiphaine Dupont, Grenoble, FR;

Philippe Gibert, Saint-Etienne-de-Crossey, FR;

Nacer Aitmani, Egreve, FR;

Vincent Beix, Chambery, FR;

Thomas Lacave, Grenoble, FR;

Marion Volpert, Grenoble, FR;

Olivier Girard, Grenoble, FR;

Denis Renaud, Grenoble, FR;

Brigitte Soulier, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01); H01L 33/08 (2010.01); H01L 25/075 (2006.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 27/153 (2013.01); H01L 33/18 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/507 (2013.01); H01L 33/54 (2013.01); H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.


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