The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Jun. 17, 2020
Applicant:

Globalfoundries Dresden Module One Limited Liability Company & Co. KG, Dresden, DE;

Inventors:

Patrick Polakowski, Dresden, DE;

Konrad Seidel, Dresden, DE;

Tarek Ali, Dresden, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/11507 (2017.01); H01L 21/28 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 27/10829 (2013.01); H01L 27/10832 (2013.01); H01L 27/11507 (2013.01); H01L 29/40111 (2019.08);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to ferroelectric based transistors and methods of manufacture. The ferroelectric based transistor includes: a semiconductor-on-insulator substrate including a semiconductor material, a buried insulator layer under the semiconductor material and a substrate material under the semiconductor channel material; a ferroelectric capacitor under the buried insulator layer and which includes a bottom electrode, a top electrode and a ferroelectric material between the bottom electrode and the top electrode; a gate stack over the semiconductor material; a first terminal contact connecting to the bottom electrode of the ferroelectric capacitor; and a second terminal contact connecting to the top electrode of the ferroelectric capacitor.


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