The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Aug. 18, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yi-Ching Chung, Hsinchu, TW;
Jui-Chun Chang, Hsinchu, TW;
Fu-Chun Tseng, Taipei, TW;
Yu-Ping Ho, Hsinchu County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first well, a second well, an isolation structure, a first field plate, a gate structure, a drain structure, and a source structure. The first well and the second well adjoin each other. The first well and the second well are disposed in the substrate. The isolation structure is disposed on the first well. The first field plate is disposed on the isolation structure. The gate structure crosses the first well and the second well, and an opening is defined between the first field plate and the gate structure to expose an edge of the isolation structure adjacent to the gate structure. The drain structure is disposed in the first well. The source structure is disposed in the second well.