The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Aug. 26, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Wen-Hsin Lin, Hsinchu County, TW;
Shin-Chen Lin, Tainan, TW;
Yu-Hao Ho, Keelung, TW;
Cheng-Tsung Wu, Taipei, TW;
Chiu-Hao Chen, Miaoli County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.