The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Feb. 14, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Jae-Woo Seo, Seoul, KR;
Youngsoo Shin, Daejeon, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon, KR;
Abstract
A semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region. First active patterns are on the PMOSFET region. Second active patterns are on the NMOSFET region. Gate electrodes intersect the first and second active patterns and extend in a first direction. First interconnection lines are disposed on the gate electrodes and extend in the first direction. The gate electrodes are arranged at a first pitch in a second direction intersecting the first direction. The first interconnection lines are arranged at a second pitch in the second direction. The second pitch is smaller than the first pitch.