The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Mar. 05, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yuta Saito, Yokkaichi Mie, JP;

Shinji Mori, Nagoya Aichi, JP;

Atsushi Takahashi, Yokkaichi Mie, JP;

Toshiaki Yanase, Yokkaichi Mie, JP;

Keiichi Sawa, Yokkaichi Mie, JP;

Kazuhiro Matsuo, Kuwana Mie, JP;

Hiroyuki Yamashita, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02672 (2013.01); H01L 29/045 (2013.01);
Abstract

In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.


Find Patent Forward Citations

Loading…