The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Apr. 21, 2020
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Sang Tae Kim, Seoul, KR;

Hyun-Cheol Song, Seoul, KR;

Seung Hyub Baek, Seoul, KR;

Ji-Won Choi, Seoul, KR;

Jin Sang Kim, Seoul, KR;

Chong Yun Kang, Seoul, KR;

Seong Keun Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 21/28556 (2013.01); H01L 27/1085 (2013.01); H01L 28/91 (2013.01);
Abstract

A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.


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