The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Dec. 05, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongchan Suh, Suwon-si, KR;
Dahye Kim, Suwon-si, KR;
SAMSUNG ELECTRONICC CO. LTD, Suwon-si, KR;
Abstract
Provided is an integrated circuit device including: a plurality of fin-type active regions protruding from a top surface of a substrate and extending in a first horizontal direction; at least one semiconductor layer, each including a lower semiconductor layer and an upper semiconductor layer sequentially stacked on at least one of the plurality of fin-type active regions; and a plurality of gate electrodes extending in a second horizontal direction crossing the first horizontal direction on the plurality of fin-type active regions, wherein the lower semiconductor layer includes a same material as a material of the upper semiconductor layer, and wherein a semiconductor interface is provided between the lower semiconductor layer and the upper semiconductor layer.