The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Sep. 10, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Masahiko Kuraguchi, Yokohama, JP;
Kentaro Ikeda, Kawasaki, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor member, a first gate electrode, a second gate electrode, a first control transistor part, a gate interconnect, and a control gate interconnect. The semiconductor member includes first and second semiconductor layers. The semiconductor member includes first and second regions, and a first control region. The first and second gate electrodes extend along a first direction. A direction from the first region toward at least a portion of the first gate electrode is along a second direction crossing the first direction. The first control transistor part includes a first control gate electrode and a first control drain electrode. The first control drain electrode is electrically connected to the first and second gate electrodes. The gate interconnect is electrically connected to the first and second gate electrodes. The control gate interconnect is electrically connected to the first control gate electrode.