The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Jul. 01, 2020
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Junji Iwahori, Yokohama, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 23/5286 (2013.01); H01L 27/092 (2013.01); H01L 29/0676 (2013.01); H01L 29/7827 (2013.01);
Abstract
A layout structure of a capacitance cell using vertical nanowire (VNW) FETs is provided. The capacitance cell includes a plurality of first-conductivity type VNW FETs lining up in the X direction, provided between a first power supply interconnect and a second power supply interconnect. The plurality of first-conductivity type VNW FETs include at least one first VNW FET having a top and a bottom connected with the first power supply interconnect and a gate connected with the second power supply interconnect.