The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Dec. 13, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Bongyong Lee, Seoul, KR;

Bohee Kang, Bucheon, KR;

Doojin Choi, Gimpo-si, KR;

Kyeongseok Park, Bucheon, KR;

Thomas Neyer, Munich, DE;

Jeongwoo Yang, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.


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