The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Jan. 26, 2021
Applicant:

Marvell Asia Pte Ltd., Singapore, SG;

Inventor:

Runzi Chang, Saratoga, CA (US);

Assignee:

MARVELL ASIA PTE LTD, Singapore, SG;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/486 (2013.01); H01L 21/76802 (2013.01); H01L 23/5386 (2013.01);
Abstract

A device includes a semiconductor substrate having first and second surfaces facing one another, and multiple through-silicon vias (TSVs). The TSVs are formed through the substrate between the first and second surfaces, at least a first TSV of the TSVs includes: (i) an electrically conductive interconnect, which is formed within the first TSV and is configured to conduct an electrical signal between the first and second surfaces, and (ii) an attenuation layer, which is formed within the first TSV, between the substrate and the electrically conductive interconnect, the attenuation layer configured to attenuate interference between electrical signals carried by two or more of the TSVs.


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