The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Dec. 04, 2020
Applicant:

Reno Technologies, Inc., Wilmington, DE (US);

Inventor:

Imran Ahmed Bhutta, Moorestown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/40 (2006.01); H01J 37/32 (2006.01); H03H 7/38 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H03H 7/38 (2013.01); H03H 7/40 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

In one embodiment, a method, a method of manufacturing a semiconductor is disclosed. A monitored semiconductor manufacturing system (monitored system) is operated over a period of time, the monitored system comprising an impedance matching network coupled between a radio frequency (RF) source and a plasma chamber. First values for a parameter of the monitored system are received, the first values comprising different values for the parameter over the time period of operation of the monitored system, and a learning model is trained using the first values for the parameter. A substrate is then placed in a plasma chamber of a controlled semiconductor manufacturing system (controlled system). A characteristic of the controlled system is determined using a current value of the parameter and the trained learning model. An action is then taken upon the controlled system to address the determined characteristic.


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