The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Oct. 21, 2019
Thin film capacitor, manufacturing method therefor, and substrate with built-in electronic component
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Yuuki Aburakawa, Tokyo, JP;
Tatsuo Namikawa, Tokyo, JP;
Suguru Andoh, Tokyo, JP;
Hitoshi Saita, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H05K 1/11 (2006.01); H01G 4/008 (2006.01); H01G 4/30 (2006.01); H01G 4/012 (2006.01); H05K 1/16 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/0085 (2013.01); H01G 4/012 (2013.01); H01G 4/306 (2013.01); H05K 1/115 (2013.01); H05K 1/162 (2013.01);
Abstract
A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 μm or more and 8 μm or less.