The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Oct. 20, 2021
China Flash Co., Ltd., Shanghai, CN;
Hong Nie, Shanghai, CN;
Jingwei Chen, Shanghai, CN;
CHINA FLASH CO., LTD., Shanghai, CN;
Abstract
The present disclosure provides a method for programming charge trap flash memory, including: enabling a channel of a charge trap storage component, to form a transverse electric field between a source and a drain, to generate primary electrons flowing from the source to the drain; colliding, by the primary electrons after a preset time, with the drain to generate electron holes; applying voltages to the drain and a substrate, where the electron holes are accelerated downward by the action of the electric field to collide with the substrate, to generate secondary electrons; and applying voltages to a gate and the substrate, to form a vertical electric field, wherein the secondary electrons generate tertiary electrons under the action of the vertical electric field and the tertiary electrons are injected into an insulating storage medium layer of the charge trap storage component, to complete a programming operation.