The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Jun. 25, 2019
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Federico Nardi, San Jose, CA (US);
Gerrit Jan Hemink, San Jose, CA (US);
Won Ho Choi, San Jose, CA (US);
Assignee:
SanDisk Technologies LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/16 (2006.01); G06F 9/30 (2018.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
G06F 17/16 (2013.01); G06F 9/3001 (2013.01); G06F 9/30036 (2013.01); G06N 3/0635 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract
An apparatus performs vector matrix multiplication (VMM) for an analog neural network (ANN). The apparatus includes a column of NAND flash cells in series, where each NAND flash cell includes a control gate; a bit line connected to the column of NAND flash cells, where a current drawn from the NAND flash cells flows to the bit line; an integrator connected to the bit line; and a controller having programmed instructions to control the column of NAND flash cells by setting the voltage of the control gate of each NAND flash cell.