The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Nov. 14, 2018
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;

Inventor:

Chuan Wang, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); H01L 23/552 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/134309 (2013.01); G02F 1/136209 (2013.01); H01L 23/552 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 29/42384 (2013.01);
Abstract

The present invention discloses a thin film transistor array substrate, a manufacturing method thereof, and a display panel. In the present invention, a width of the channel is increased by cooperation of an electrically connection between the interdigital gate and the interdigital light-shielding layer with design of the interdigital gate. When a width/length ratio (W/L) of the channels in a single thin film crystal device is maintained constant, an increase in the channel width allows the width of the channel layer occupied by the channels to be reduced while maintaining the total width of the channels in the single thin film transistor constant, thereby reducing the area occupied by the single thin film transistor device.


Find Patent Forward Citations

Loading…