The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Jan. 09, 2017
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Guanghua Wang, Clifton Park, NY (US);

Jason Edward Dees, Ballston Lake, NY (US);

Scott Michael Oppenheimer, Schenectady, NY (US);

Naveenan Thiagarajan, Latham, NY (US);

Assignee:

GENERAL ELECTRIC COMPANY, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 13/00 (2021.01); G01J 5/04 (2006.01); G01J 5/00 (2022.01); G03B 17/55 (2021.01); H04N 5/232 (2006.01); F01D 25/26 (2006.01); F01D 25/14 (2006.01); F01D 17/08 (2006.01); H04N 5/225 (2006.01); G01J 5/061 (2022.01); H04N 5/33 (2006.01);
U.S. Cl.
CPC ...
G01J 5/042 (2013.01); F01D 17/085 (2013.01); F01D 25/14 (2013.01); F01D 25/26 (2013.01); G01J 5/0014 (2013.01); G01J 5/0088 (2013.01); G01J 5/046 (2013.01); G01J 5/061 (2013.01); G03B 17/55 (2013.01); H04N 5/22521 (2018.08); H04N 5/23206 (2013.01); H04N 5/33 (2013.01); G01J 2005/0077 (2013.01); Y02T 50/60 (2013.01);
Abstract

An infrared imaging device includes a case, a plurality of electronic components, and a heat transfer structure. The plurality of electronic components is configured to collect data and have a predetermined temperature parameter. The plurality of electronic components is disposed within the case. The heat transfer structure is disposed within the case. The heat transfer structure is configured to conduct heat away from the plurality of electronic components. The heat transfer structure is further configured to regulate a temperature of the electronic components below the predetermined temperature parameter.


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