The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Feb. 01, 2021
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Shahar Ben-Menahem, Mountain View, CA (US);

Tzu-Yuan Lin, San Jose, CA (US);

Michael Nikkhoo, Saratoga, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
F28D 15/00 (2006.01); F28D 15/02 (2006.01); H01L 23/367 (2006.01); H01L 23/427 (2006.01);
U.S. Cl.
CPC ...
F28D 15/02 (2013.01); H01L 23/3675 (2013.01); H01L 23/427 (2013.01); F28F 2210/02 (2013.01);
Abstract

A vapor-chamber that includes a porous microstructure sheet with varying surface energy across different regions to optimize utilization of a working fluid. Modulating the surface energy of the porous microstructure sheet can minimize the amount of the working fluid that becomes trapped in the condenser region(s) and maximize an aggregate thin-film evaporation area of the working fluid in the evaporator region(s). The condenser region of the vapor-chamber is treated so that the internal surfaces have low surface energy. For example, the treatment may cause the condenser region to become hydrophobic to minimize the amount of fluid that becomes trapped in the condenser. The evaporator region is treated so that the internal surfaces have high surface energy. For example, the treatment may cause the evaporator region to become hydrophilic to induce the formation of large numbers of robust (e.g., dry-out resistant) thin-film evaporation sites.


Find Patent Forward Citations

Loading…