The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Dec. 06, 2016
Element Six Technologies Limited, Didcot, GB;
Element Six Technologies Us Corporation, Santa Clara, CA (US);
Wilbur Lew, Mount Laurel, NJ (US);
Gregory Bruce, Abington, PA (US);
Andrew Mark Edmonds, Didcot, GB;
Matthew Lee Markham, Didcot, GB;
Alastair Douglas Stacey, Didcot, GB;
Harpreet Kaur Dhillon, Didcot, GB;
Element Six Technologies Limited, Didcot, GB;
Element Six Technologies US Corporation, Santa Clara, CA (US);
Abstract
A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV); negatively charged nitrogen-vacancy defects (NV); and single substitutional nitrogen defects (N) which transfer their charge to the neutral nitrogen-vacancy defects (NV) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV]/[NV]), [NV] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T' is a decoherence time of the NVdefects, where T′ is T* for DC magnetometry or Tfor AC magnetometry.