The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jan. 15, 2021
Applicant:
Seagate Technology Llc, Fremont, CA (US);
Inventors:
Zheng Wang, Louisville, CO (US);
Ara Patapoutian, Hopkinton, MA (US);
Assignee:
SEAGATE TECHNOLOGY LLC, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01); H03M 13/39 (2006.01); H03M 13/11 (2006.01); G06N 20/00 (2019.01); G11C 16/34 (2006.01); G11C 16/30 (2006.01); H03M 13/15 (2006.01);
U.S. Cl.
CPC ...
H03M 13/3927 (2013.01); G06N 20/00 (2019.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01); G11C 16/3495 (2013.01); H03M 13/1105 (2013.01); H03M 13/1168 (2013.01); H03M 13/1575 (2013.01);
Abstract
Estimation of read parameters for a read channel of a solid-state storage device using a machine learning apparatus. The machine learning apparatus may be provided with signal count metrics from multiple regions of the memory cell signal space and syndrome weights from an error correction code. Other inputs may also be provided comprising metrics of the memory or read operations. In an example, the read parameters may include one or more reference threshold voltage values for read voltages applied to a memory cell and/or log-likelihood ratio (LLR) values for the memory cell.