The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Nov. 09, 2020
Applicant:

Korea Electronics Technology Institute, Seongnam-si, KR;

Inventors:

Dongmyoung Joo, Bucheon-si, KR;

Junhyuk Choi, Bucheon-si, KR;

Joonsung Park, Seoul, KR;

Jinhong Kim, Suwon-si, KR;

Byongjo Hyon, Anyang-si, KR;

Yongsu Noh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/012 (2006.01);
U.S. Cl.
CPC ...
H03K 3/012 (2013.01);
Abstract

This application relates to a wide band gap (WBG) power semiconductor system. In one aspect, the system includes a controller configured to generate a switching control signal and a gate driver configured to receive the switching control signal and generate a switching drive signal in response to the switching control signal. The system also includes a WBG power semiconductor device coupled to the gate driver, comprising a gate terminal for receiving the switching drive signal, and configured to be switched in response to the switching drive signal. The switching drive signal has one of three signal levels: a first voltage level higher than a zero voltage level, a second voltage level lower than the zero voltage level, and the zero voltage level at an arbitrary instant. As a result, the gate driver drives the WBG power semiconductor device with the three voltage levels.


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