The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Apr. 23, 2020
Applicant:

Dell Products L.p., Round Rock, TX (US);

Inventors:

Wayne Kenneth Cook, Round Rock, TX (US);

Yang Lei, Austin, TX (US);

John J. Breen, Harker Heights, TX (US);

Lei Wang, Austin, TX (US);

Assignee:

DELL PRODUCTS L.P., Round Rock, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 7/5395 (2006.01); G06F 1/26 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 7/5395 (2013.01); G06F 1/26 (2013.01); H02M 1/0058 (2021.05);
Abstract

In one or more embodiments, one or more systems, methods, and/or processes may: receiving, by a first circuit of an inductor-inductor-capacitor (LLC) converter, a pulse width modulation (PWM) signal to control a gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) of a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs) of the LLC converter; provide, by the first circuit, current to a transformer based at least on amplifications of the PWM by at least one of the plurality of power MOSFETs; determine, by the second circuit, if a voltage value associated with a drain of the power MOSFET is above a threshold voltage value; if so, suppress, by the second circuit, the PWM signal to the gate of the power MOSFET; and if not, permit, by the second circuit, the PWM signal to the gate of the power MOSFET.


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