The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jun. 11, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hideki Horii, Seoul, KR;
Jungmoo Lee, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1273 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
A variable resistance memory device includes a first electrode on a substrate, a variable resistance pattern on the first electrode, a second electrode on the variable resistance pattern, a selection pattern structure on the second electrode, and a third electrode on the selection pattern structure. The selection pattern structure may include a first leakage current prevention pattern and a selection pattern sequentially stacked, and the first leakage current pattern may include a two-dimensional transition metal dichalcogenide (TMDC) material.