The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Dec. 30, 2020
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Anhe He, Xiamen, CN;

Suhui Lin, Xiamen, CN;

Jiansen Zheng, Xiamen, CN;

Kangwei Peng, Xiamen, CN;

Xiaoxiong Lin, Xiamen, CN;

Chenke Hsu, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 33/40 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48506 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81805 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/37001 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.


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