The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Aug. 31, 2018
Creeled, Inc., Durham, NC (US);
Joseph G. Sokol, Durham, NC (US);
Jefferson W. Plummer, Durham, NC (US);
Caleb A. Kent, Durham, NC (US);
Thomas A. Kuhr, Durham, NC (US);
Robert David Schmidt, Wake Forest, NC (US);
CreeLED, Inc., Durham, NC (US);
Abstract
Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.