The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jun. 14, 2018
Lg Display Co., Ltd., Seoul, KR;
Uif (University Industry Foundation), Yonsei University, Seoul, KR;
Hyun Jae Kim, Seoul, KR;
Young Jun Tak, Seoul, KR;
Jusung Chung, Seoul, KR;
Jeong Min Moon, Paju-si, KR;
Su Seok Choi, Paju-si, KR;
Sungpil Ryu, Paju-si, KR;
Jihwan Jung, Paju-si, KR;
Kiseok Chang, Paju-si, KR;
LG DISPLAY CO., LTD., Seoul, KR;
UIF (UNIVERSITY INDUSTRY FOUNDATION) YONSEI UNIVERSITY, Seoul, KR;
Abstract
The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.