The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Sep. 28, 2020
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Kyuok Lee, Yongin-Si, KR;
Jaehyun Yoo, Suwon-Si, KR;
Jungkyung Kim, Seoul, KR;
Juhyeon Song, Bucheon-Si, KR;
Suyeon Cho, Hwaseong-Si, KR;
Wonpyo Hong, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a semiconductor substrate. A drift region is disposed in the semiconductor substrate. The drift region has a first conductivity type. A body region is disposed in the semiconductor substrate, adjacent to the drift region. The body region has a second conductivity type. A drain region is disposed opposite to the body region in the drift region. A drain isolation insulating film is disposed in a portion adjacent to the drain region of the drift region. A gate insulating film is disposed on the semiconductor substrate and is extended over a portion of the body region and a portion of the drift region. A gate electrode is disposed on the gate insulating film and the gate electrode has at least one closed-type opening.