Transistor device with buried field electrode connection

Abstract

A semiconductor device includes: a semiconductor substrate; trenches formed in the substrate and extending lengthwise in parallel with one another, the trenches having connecting regions which interconnect adjacent ones of the trenches; semiconductor mesas separated from one another by the trenches in a first lateral direction and by the connecting regions in a second lateral direction transverse to the first lateral direction; a gate electrode and a field electrode below the gate electrode in at least some of the trenches, and dielectrically insulated from each other and from the semiconductor substrate; first contacts vertically extending into one or more transistor device regions in the semiconductor mesas; and second contacts vertically extending into the field electrodes in the connecting regions such that the gate electrodes are uninterrupted by the second contacts. Corresponding methods of producing such a semiconductor device are also described.