The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Dec. 21, 2018
Rohm Co., Ltd., Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes a first impurity layer made of an AlGaN (0<X≤1) based material and containing a first impurity with which a depth of an acceptor level from a valence band (E-E) is made not less than 0.3 eV but less than 0.6 eV, an electron transit layer formed on the first impurity layer, an electron supply layer formed on the electron transit layer, agate electrode formed on the electron transit layer, and a source electrode and a drain electrode formed such that the source electrode and the drain electrode sandwich the gate electrode and electrically connected to the electron supply layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile