The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Jan. 26, 2018
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Tatsuji Nagaoka, Nagakute, JP;

Yusuke Yamashita, Nagakute, JP;

Yasushi Urakami, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 23/34 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 23/34 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/41741 (2013.01); H01L 29/66348 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate comprising an upper surface and a lower surface, an upper electrode provided on the upper surface, and a lower electrode provided on the lower surface. The semiconductor substrate includes, in a planar view, a first section including a center of the semiconductor substrate and a second section located between the first section and a peripheral edge of the semiconductor substrate. The first and second sections each comprise a MOSFET structure including a body diode. The MOSFET structure in the first section and the MOSFET structure in the second section are different from each other such that a forward voltage drop of the body diode in the first section with respect to a current density is higher than a forward voltage drop of the body diode in the second section with respect to the current density.


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