The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Nov. 05, 2020
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Koichi Nishita, Nagaokakyo, JP;

Masaki Takeuchi, Nagaokakyo, JP;

Yutaka Takeshima, Nagaokakyo, JP;

Kazuhiro Inoue, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/10 (2006.01); H01L 49/02 (2006.01); H01G 4/38 (2006.01); H01L 27/08 (2006.01); H01L 27/22 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01G 4/38 (2013.01); H01L 27/0805 (2013.01); H01L 27/224 (2013.01); H01L 28/91 (2013.01); H01L 29/66181 (2013.01); H01L 29/945 (2013.01);
Abstract

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface that face each other in a thickness direction, the first main surface containing a trench; an insulation layer on a surface of the trench; a first electrode layer on the insulation layer; a first dielectric layer on the first electrode layer; and a second electrode layer on the first dielectric layer, in which a thickness (L) of the insulation layer, a thickness (L) of the first electrode layer, and a thickness (L) of the second electrode layer satisfy L>L>L.


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