The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jun. 11, 2020
Samsung Display Co., Ltd., Yongin-si, KR;
Jaebum Han, Yongin-si, KR;
Younggil Park, Yongin-si, KR;
Junghwa Park, Yongin-si, KR;
Nari Ahn, Yongin-si, KR;
Sooim Jeong, Yongin-si, KR;
Kinam Kim, Yongin-si, KR;
Moonsung Kim, Yongin-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Abstract
A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.