The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

May. 20, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Junji Hirase, Osaka, JP;

Yoshihiro Sato, Osaka, JP;

Yasuyuki Endoh, Hyogo, JP;

Hiroyuki Amikawa, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/355 (2011.01); H04N 5/374 (2011.01); H04N 5/378 (2011.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/0288 (2013.01); H01L 27/14603 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 5/355 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01);
Abstract

An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.


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