The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Dec. 18, 2019
Applicants:

Hefei Boe Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Kui Gong, Beijing, CN;

Biliang Dong, Beijing, CN;

Xianxue Duan, Beijing, CN;

Zhihai Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 21/02178 (2013.01); H01L 21/02244 (2013.01); H01L 27/1248 (2013.01);
Abstract

An array substrate and a manufacturing method thereof are disclosed. The method includes: forming a first thin film transistor which includes a first semiconductor layer, a first gate electrode, a first drain electrode and a first source electrode; forming a second thin film transistor which includes a second semiconductor layer, a second gate electrode, a second drain electrode and a second source electrode; and forming a dielectric layer which spaces the first semiconductor layer apart from the second semiconductor layer; the method further includes: processing the same layer to form at least one selected from the group consisting of the first gate electrode, the first drain electrode and the first source electrode, at least one selected from the group consisting of the second gate electrode, the second drain electrode and the second source electrode, and the dielectric layer by the same layer.


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