The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Feb. 27, 2019
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Masanori Tsukamoto, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); G11C 11/22 (2006.01); H01L 27/1159 (2017.01); H01L 27/11587 (2017.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); G11C 11/223 (2013.01); H01L 27/11587 (2013.01); H01L 29/42384 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract
To provide a semiconductor storage apparatus, a product-sum calculation apparatus, and electronic equipment in which memory cells are highly integrated and highly densified. A semiconductor storage apparatus including: a first transistor including a first gate electrode via a ferroelectric film on an activation region including source or drain regions; and a second transistor including source or drain regions in an activation layer provided on the first gate electrode and a second gate electrode on the activation layer via an insulating film.