The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Aug. 19, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yefei Han, Yokkaichi Mie, JP;

Tetsu Morooka, Yokkaichi Mie, JP;

Norio Ohtani, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01);
Abstract

According to one embodiment, a semiconductor storage device includes a first interconnection, a second interconnection, a first channel part, a second channel part, a first charge storage part, a second charge storage part, a first insulator, a second insulator, and a third insulator. The first insulator includes a portion between at least a portion of the first charge storage part and at least a portion of the second charge storage part, and extends in a first direction. The second insulator is between the first insulator and the first interconnection, and extends in the first direction at a position arranged with respect to the first charge storage part in the first direction. The third insulator is between the second interconnection and the first insulator, and extends in the first direction at a position arranged with respect to the second charge storage part in the first direction.


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