logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11393812 B1

PDFFull Text
Date of Patent:
Jul. 19, 2022

Filed:

Dec. 19, 2018

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Kazuki Kamimura, Matsumoto, JP;

Motoyoshi Kubouchi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/73 (2006.01); H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 21/225 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/8249 (2013.01); H01L 29/0623 (2013.01); H01L 29/407 (2013.01); H01L 29/66136 (2013.01); H01L 29/66348 (2013.01); H01L 29/7302 (2013.01); H01L 29/7397 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 27/0635 (2013.01);
Abstract

A semiconductor device including a diode region provided in a semiconductor substrate is provided, the diode region including a base region of a first conductivity type exposed on an upper surface of the semiconductor substrate, a cathode region of a second conductivity type exposed on a lower surface of the semiconductor substrate, an inter-cathode region of a first conductivity type exposed on the lower surface of the semiconductor substrate and alternately arranged with the cathode region in a predetermined direction, and a floating region of a second conductivity type provided above the cathode region and above the inter-cathode region.

Find Patent Forward Citations

Loading…