The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Sep. 01, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tsang-Po Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 29/41775 (2013.01);
Abstract

The present disclosure provides a semiconductor structure having a test structure. The semiconductor structure includes a wafer and a test structure. The test structure is disposed on the wafer, and includes a first device and a second device. The first device includes a first source/drain layer and a first gate layer disposed above the first source/drain layer. The second device includes a second source/drain layer and a second gate layer disposed above the second source/drain layer. The second gate layer is connected to the first gate layer. The first gate layer is disposed along a first direction and the second gate layer is disposed along a second direction orthogonal to the first direction.


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