The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Oct. 05, 2018
Hexagem Ab, Hjarup, SE;
Jonas Ohlsson, Malmo, SE;
Lars Samuelson, Malmo, SE;
Kristian Storm, Hjarup, SE;
Rafal Ciechonski, Lund, SE;
Bart Markus, Hjarup, SE;
HEXAGEM AB, Hjarup, SE;
Abstract
A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer () and a buffer layer (), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (); an array of nano structures () epitaxially grown from the growth surface; a continuous planar layer () formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (), epitaxially grown on the planar layer ().