The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Mar. 05, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Geoffrey C. Gardner, West Lafayette, IN (US);

Sergei V. Gronin, West Lafayette, IN (US);

Raymond L. Kallaher, West Lafayette, IN (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02603 (2013.01); H01L 21/02304 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01);
Abstract

A nanowire structure includes a substrate, a patterned mask layer on the substrate, and a nanowire. The patterned mask layer is on the substrate and includes an opening through which the substrate is exposed. The nanowire is on the substrate in the opening of the patterned mask layer. The nanowire includes a buffer layer on the substrate, a defect filtering layer on the buffer layer, and an active layer on the defect filtering layer. The defect filtering layer is a strained layer. By providing the defect filtering layer between the buffer layer and the active layer of the nanowire, defects present in the buffer layer can be prevented from propagating into the active layer. Accordingly, defects in the active layer of the nanowire are reduced, thereby improving the performance of the nanowire structure.


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