The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Mar. 06, 2019
Applicant:
Uchicago Argonne, Llc, Chicago, IL (US);
Inventors:
Anil U. Mane, Naperville, IL (US);
Jeffrey W. Elam, Elmhurst, IL (US);
Assignee:
UChicago Argonne, LLC, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02205 (2013.01); H01L 21/02255 (2013.01);
Abstract
Transition metal dichalcogenides (TMDs) are deposited by atomic layer deposition as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface. The TMD may be etched using an atomic layer etching technique.