The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Jul. 01, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Jessica Liu Strohmann, Cupertino, CA (US);

Hrishikesh Vijaykumar Panchawagh, Cupertino, CA (US);

Nicholas Ian Buchan, San Jose, CA (US);

Yipeng Lu, Davis, CA (US);

Kostadin Dimitrov Djordjev, Los Gatos, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06V 40/13 (2022.01); G01N 29/34 (2006.01);
U.S. Cl.
CPC ...
G06V 40/1306 (2022.01); G01N 29/348 (2013.01);
Abstract

An ultrasonic sensor system may include an ultrasonic transceiver layer, a thin-film transistor (TFT) layer proximate a first side of the ultrasonic transceiver layer, a frequency-splitting layer proximate a second side of the ultrasonic transceiver layer and a high-impedance layer proximate the frequency-splitting layer. The frequency-splitting layer may reside between the ultrasonic transceiver layer and the high-impedance layer. The high-impedance layer may have a higher acoustic impedance than the frequency-splitting layer.


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