The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Oct. 17, 2019
Em Microelectronic Marin S.a., Marin, CH;
Tomas Novak, Libeznice, CZ;
Filippo Marinelli, Lussy-sur-Morges, CH;
EM MICROELECTRONIC-MARIN S.A., Marin, CH;
Abstract
The present invention concerns an anti-tearing protection system () for a non-volatile memory () comprising a first memory block () and a second memory block (), the first and second memory blocks () being arranged to store a data set comprising user data and an error detection code obtained based on the user data. The first and second memory blocks () can be read in a first read mode for determining logic states of data elements comprised in the data set according to the first read mode. The user data in a respective memory block are considered to be correct according to the first read mode if its error detection code equals a first given value. The first and second memory blocks () can further be read in a second read mode for determining the logic states of the data elements comprised in data set according to the second read mode. The user data in a respective memory block are considered to be correct according to the second read mode if its error detection code equals the first given value and if the user data as read in the second read mode are determined to be identical to the user data as read in the first read mode. A third read mode may also be defined. The first read mode may be considered to be a normal read mode, while the second and third read modes may be used to determine if data were strongly written and erased, respectively.