The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Aug. 20, 2020
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Yu Mi Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 11/1076 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01);
Abstract
A memory system may include a memory device comprising a memory device including a plurality of nonvolatile memories, each nonvolatile memory including a plurality of blocks; and a controller configured to: perform a background read operation on a select nonvolatile memory among the plurality of nonvolatile memories using an initial read voltage; store the initial read voltage, as a history read voltage, in a history table; select the history read voltage from the history table in response to a read request from a host; and perform an initial read operation on the select nonvolatile memory using the history read voltage.