The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Apr. 11, 2019
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Soh Uenoyama, Hamamatsu, JP;

Yuu Takiguchi, Hamamatsu, JP;

Hirotoshi Terada, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/311 (2006.01); G01R 31/302 (2006.01); G02B 1/02 (2006.01); G02B 21/00 (2006.01); G02B 7/02 (2021.01); G02B 21/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/311 (2013.01); G02B 1/02 (2013.01); G02B 7/02 (2013.01); G02B 21/02 (2013.01);
Abstract

The present disclosure relates to a metalens unit including a metalens having a structure for reducing a thickness. The metalens unit includes a metalens and a holding portion for the metalens. The metalens includes a base portion and a first antenna portion. The first antenna portion is constituted by a plurality of first antennas each having a first refractive index and a first intermediate portion having a second refractive index and positioned between the plurality of first antennas. A first antenna portion is formed such that one-dimensional arrangement constituted by some of end surfaces of the plurality of first antennas includes a pattern in which at least one of a size of the end surface, a shape of the end surface, and an arrangement pitch is changed along a reference line.


Find Patent Forward Citations

Uenoyama, Soh. (2022). Metalens unit, semiconductor fault analysis device, and semiconductor fault analysis method (U.S. Patent No. 11391774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11391774

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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