The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Sep. 06, 2018
Applicant:

Goertek, Inc., Weifang, CN;

Inventors:

Quanbo Zou, Weifang, CN;

Yongwei Dong, Weifang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/00 (2006.01); H04R 19/04 (2006.01); B81B 7/00 (2006.01); H04R 7/00 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); B81B 7/008 (2013.01); H04R 7/00 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/015 (2013.01); B81B 2207/03 (2013.01); B81B 2207/07 (2013.01); H01L 29/788 (2013.01); H04R 2201/003 (2013.01);
Abstract

An MEMS microphone is provided, comprising: a first substrate; a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate; and a floating gate field effect transistor outputting a varying electrical signal, the floating gate field effect transistor including a source electrode and a drain electrode both provided on the first substrate and a floating gate provided on the vibration diaphragm.


Find Patent Forward Citations

Loading…