The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

May. 05, 2020
Applicants:

Alexandre Robichaud, Montreal, CA;

Paul-vahe Cicek, Montreal, CA;

Dominic Deslandes, Chambly, CA;

Frederic Nabki, Montreal, CA;

Inventors:

Alexandre Robichaud, Montreal, CA;

Paul-Vahe Cicek, Montreal, CA;

Dominic Deslandes, Chambly, CA;

Frederic Nabki, Montreal, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/09 (2006.01); H03H 9/24 (2006.01); H03H 9/02 (2006.01); H03H 3/007 (2006.01);
U.S. Cl.
CPC ...
H03H 9/09 (2013.01); H03H 3/0072 (2013.01); H03H 9/02338 (2013.01); H03H 9/2436 (2013.01);
Abstract

Micro-machined acoustic and ultrasonic transducer (MAUT), particularly piezoelectric MAUT (PMAUT), performance tradeoffs have meant reasonable pixel depth resolution necessitated low quality factor (Q) transducers with power distributed over a large bandwidth yielding modest imaging ranges whilst high-Q transducers providing higher acoustic power output for longer imaging ranges exhibit extended ringing limiting pixel depth information. Accordingly, the inventors have established MAUTs supporting high-Q transducers for long-range high-resolution imaging by integrating electromechanical actuators (dampers) which can be selectively engaged to mechanically damped the MAUT. In several applications PMAUT arrays are required where all transducer elements should have almost identical resonant frequencies. However, prior art fabrication processes have tended to produce PMAUTs with large inter-chip and inter-wafer variances. Prior art methodologies to reduce inter-wafer process variations do not address intra-wafer or inter-chip process variations and accordingly the inventors have established manufacturing methodologies and design solutions to address these for the PMAUT resonant frequency.


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